Scientists of the School of Natural Sciences of Far Eastern Federal University (SNS FEFU) with colleagues from Russia, South Korea, and Australia suggest the breaking new ground approach to manage spin-electronic properties and functionality of the thin-film magnetic nanosystems. The method is important for the development of a new generation of tiny electronics (spin-orbitronics) and superfast high-capacity computer memory. A related article appears in NPG Asia Materials.
Scientists from the SNS FEFU Laboratory for Thin Film Technologies propose to control the functionality of a magnetic nanosystem through the surface roughness of a magnetic film sandwiched between heavy metal and a capping layer.
Modulating the roughness amplitude on the bottom and top surfaces (interfaces) of the magnetic film in the range of less than a nanometer, which is about the size of atoms, the researchers have maximized useful